Aristovich Kirill Y, Dos Santos Gustavo S, Holder David S
Department of Medical Physics and Biomedical Engineering, University College London, Malet Place Engineering Building, Gower Street, London, WC1E 6BT, UK.
Physiol Meas. 2015 Jun;36(6):1245-59. doi: 10.1088/0967-3334/36/6/1245. Epub 2015 May 26.
Electrical impedance tomography (EIT) could provide images of fast neural activity in the adult human brain with a resolution of 1 ms and 1 mm by imaging impedance changes which occur as ion channels open during neuronal depolarization. The largest changes occur at dc and decrease rapidly over 100 Hz. Evoked potentials occur in this bandwidth and may cause artefactual apparent impedance changes if altered by the impedance measuring current. These were characterized during the compound action potential in the walking leg nerves of Cancer pagurus, placed on Ag/AgCl hook electrodes, to identify how to avoid artefactual changes during brain EIT. Artefact-free impedance changes (δZ) decreased with frequency from -0.045 ± 0.01% at 225 Hz to -0.02 ± 0.01% at 1025 Hz (mean ± 1 SD, n = 24 in 12 nerves) which matched changes predicted by a finite element model. Artefactual δZ reached c.300% and 50% of the genuine membrane impedance change at 225 Hz and 600 Hz respectively but decreased with frequency of the applied current and was negligible above 1 kHz. The proportional amplitude (δZ (%)) of the artefact did not vary significantly with the amplitude of injected current of 5-20 µA pp. but decreased significantly from -0.09 ± 0.024 to -0.03 ± 0.023% with phase of 0 to 45°. For fast neural EIT of evoked activity in the brain, artefacts may arise with applied current of >10 µA. Independence of δZ with respect to phase but not the amplitude of applied current controls for them; they can be minimized by randomizing the phase of the applied measuring current and excluded by recording at >1 kHz.
电阻抗断层成像(EIT)可以通过对神经元去极化过程中离子通道打开时发生的阻抗变化进行成像,以1毫秒和1毫米的分辨率提供成人大脑快速神经活动的图像。最大的变化发生在直流电下,并在100赫兹以上迅速减小。诱发电位出现在这个带宽内,如果被阻抗测量电流改变,可能会导致伪像性的表观阻抗变化。在置于银/氯化银钩状电极上的黄道蟹行走腿神经的复合动作电位期间,对这些变化进行了表征,以确定如何在脑部EIT过程中避免伪像性变化。无伪像的阻抗变化(δZ)随频率降低,从225赫兹时的-0.045±0.01%降至1025赫兹时的-0.02±0.01%(平均值±1标准差,12条神经中的24个样本),这与有限元模型预测的变化相符。在225赫兹和600赫兹时,伪像性δZ分别达到真实膜阻抗变化的约300%和50%,但随施加电流的频率降低,在1千赫兹以上可忽略不计。伪像的比例幅度(δZ(%))在5 - 20微安峰峰值的注入电流幅度下没有显著变化,但随着相位从0°到45°,从-0.09±0.024%显著降至-0.03±0.023%。对于大脑中诱发活动的快速神经EIT,当施加电流>10微安时可能会出现伪像。δZ相对于施加电流的相位而非幅度具有独立性,可通过使施加测量电流的相位随机化来将其最小化,并通过在>1千赫兹下记录来排除。