Theoretical investigations of electronic, optical and mechanical properties for GaSb and AlSb semiconductors under the influence of temperature.

In this paper we explore the effects of temperature on the electronic and mechanical properties of GaSb and AlSb semiconductors by using the local empirical pseudo-potential method. Our results show that the band gaps, refractive index, optical dielectric constant, elastic constants (C11, C12, C44), bulk modulus, shear modulus and Young modulus of these compounds vary with the change in temperature. The comparison of some of our results with the available experimental data confirms the accurateness of our theoretical approach, which also infers the reliability of our other theoretical results. As, for some of the present calculations a little experimental data is available for comparison, therefore these results can be used as a reference work in the future studies.