通过成核动力学控制实现旋转失配自由的六方过渡金属二卤族化合物单层异质外延层状堆叠和缝合生长。
Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls.
机构信息
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang, 790-784, Korea.
Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), 77 Cheongam-Ro, Pohang, 790-784, Korea.
出版信息
Adv Mater. 2015 Jul 1;27(25):3803-10. doi: 10.1002/adma.201500846. Epub 2015 May 22.
2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.
二维垂直堆叠和单层（ML）六方过渡金属二硫属化物的横向缝合生长被报道。通过控制顺序气相生长过程中的二维形核动力学，实现了 MoS2 和 WS2 MLs 的二维异质外延操控。这使得可以在没有层间旋转失配的情况下创建六边形对六边形单元堆叠和六边形对六边形缝合。
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