Guo Xia, Guo Chun Wei, Wang Cheng, Li Chong, Sun Xiao Ming
Photonic Research Lab, Beijing University of Technology, Beijing, 100124, People's Republic of China,
Nanoscale Res Lett. 2014 Dec;9(1):2495. doi: 10.1186/1556-276X-9-670. Epub 2014 Dec 11.
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σ dc/σ op of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.
开发了低速旋涂法，以在玻璃上制备均匀且相互连接的银纳米线（AgNWs）薄膜，其透过率为95%，方阻为20Ω/sq，与ITO相当。299.3的σdc/σop拟合值归因于旋涂过程。探索了这种溶液处理的AgNW薄膜作为透明导电层在AlGaInP发光二极管（LED）上的优势。光输出功率提高了100%，波长红移从12nm降至3nm，这表明通过低速旋涂制备的AgNW薄膜在光电器件的大规模透明导电层应用中具有吸引人的特性。
