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作为与基于InP的InGaAs传感器集成的偏振器的亚波长金光栅。

Subwavelength Gold Grating as Polarizers Integrated with InP-Based InGaAs Sensors.

作者信息

Wang Rui, Li Tao, Shao Xiumei, Li Xue, Huang Xiaqi, Shao Jinhai, Chen Yifang, Gong Haimei

机构信息

†State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.

‡Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.

出版信息

ACS Appl Mater Interfaces. 2015 Jul 8;7(26):14471-6. doi: 10.1021/acsami.5b03679. Epub 2015 Jun 26.

Abstract

There are currently growing needs for polarimetric imaging in infrared wavelengths for broad applications in bioscience, communications and agriculture, etc. Subwavelength metallic gratings are capable of separating transverse magnetic (TM) mode from transverse electric (TE) mode to form polarized light, offering a reliable approach for the detection in polarization way. This work aims to design and fabricate subwavelength gold gratings as polarizers for InP-based InGaAs sensors in 1.0-1.6 μm. The polarization capability of gold gratings on InP substrate with pitches in the range of 200-1200 nm (fixed duty cycle of 0.5) has been systematically studied by both theoretical modeling with a finite-difference time-domain (FDTD) simulator and spectral measurements. Gratings with 200 nm lines/space in 100-nm-thick gold have been fabricated by electron beam lithography (EBL). It was found that subwavelength gold gratings directly integrated on InP cannot be applied as good polarizers, because of the existence of SPP modes in the detection wavelengths. An effective solution has been found by sandwiching the Au/InP bilayer using a 200 nm SiO2 layer, leading to significant improvement in both TM transmission and extinction ratio. At 1.35 μm, the improvement factors are 8 and 10, respectively. Therefore, it is concluded that the Au/SiO2/InP trilayer should be a promising candidate of near-infrared polarizers for the InP-based InGaAs sensors.

摘要

目前,生物科学、通信和农业等广泛领域对红外波长的偏振成像需求日益增长。亚波长金属光栅能够将横磁(TM)模式与横电(TE)模式分离以形成偏振光,为偏振方式的检测提供了一种可靠方法。这项工作旨在设计并制造用于基于InP的InGaAs传感器的亚波长金光栅偏振器,波长范围为1.0 - 1.6μm。通过使用时域有限差分(FDTD)模拟器进行理论建模和光谱测量,系统研究了间距在200 - 1200nm范围内(固定占空比为0.5)的InP衬底上金光栅的偏振能力。通过电子束光刻(EBL)制备了100nm厚金层、线/间距为200nm的光栅。研究发现,直接集成在InP上的亚波长金光栅不能用作良好的偏振器,因为在检测波长处存在表面等离激元(SPP)模式。通过使用200nm的SiO₂层夹在Au/InP双层之间找到了一种有效解决方案,这使得TM模式传输和消光比都有显著提高。在1.35μm处,改善因子分别为8和10。因此,可以得出结论,Au/SiO₂/InP三层结构应该是基于InP的InGaAs传感器近红外偏振器的一个有前途的候选方案。

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