Vučičević J, Tanasković D, Rozenberg M J, Dobrosavljević V
Scientific Computing Laboratory, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia.
Laboratoire de Physique des Solides, CNRS-UMR8502, Université de Paris-Sud, Orsay 91405, France and Departamento de Física, FCEN, Universidad de Buenos Aires, Ciudad Universitaria Pabellón I, (1428) Buenos Aires, Argentina.
Phys Rev Lett. 2015 Jun 19;114(24):246402. doi: 10.1103/PhysRevLett.114.246402. Epub 2015 Jun 18.
Bad-metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through dynamical mean-field theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transition are confined to extremely low temperatures, while clear signatures of Mott quantum criticality emerge across much of the phase diagram. Remarkable scaling behavior is identified for the entire family of resistivity curves, with a quantum critical region covering the entire BM regime, providing not only insight, but also quantitative understanding around the MIR limit, in agreement with the available experiments.
具有延伸至远高于莫特-约菲-雷格尔(MIR)极限的线性电阻率温度依赖性的不良金属(BM)行为,通常被视为强关联的关键未解决特征之一。在此,我们通过研究一个完全受挫的哈伯德模型,将BM行为与莫特量子临界性联系起来,在该模型中所有长程磁序均被抑制,并且莫特问题可通过动态平均场理论得到严格解决。我们表明,对于掺杂的莫特绝缘体区域,共存穹顶及相关的一级莫特金属-绝缘体转变被限制在极低温度,而在相图的大部分区域出现了明显的莫特量子临界特征。整个电阻率曲线族呈现出显著的标度行为,一个量子临界区域覆盖了整个BM区域,这不仅提供了深入理解,还对MIR极限给出了定量认识,与现有实验结果相符。