Glass S, Li G, Adler F, Aulbach J, Fleszar A, Thomale R, Hanke W, Claessen R, Schäfer J
Physikalisches Institut and Röntgen Research Center for Complex Material Systems, Universität Würzburg, 97074 Würzburg, Germany.
Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany.
Phys Rev Lett. 2015 Jun 19;114(24):247602. doi: 10.1103/PhysRevLett.114.247602. Epub 2015 Jun 18.
Two-dimensional (2D) atom lattices provide model setups with Coulomb correlations that induce competing ground states. Here, SiC emerges as a wide-gap substrate with reduced screening. We report the first artificial high-Z atom lattice on SiC(0001) by Sn adatoms, based on experimental realization and theoretical modeling. Density-functional theory of our triangular structure model closely reproduces the scanning tunneling microscopy. Photoemission data show a deeply gapped state (∼2 eV gap), and, based on our calculations including dynamic mean-field theory, we argue that this reflects a pronounced Mott-insulating scenario. We also find indications that the system is susceptible to antiferromagnetic superstructures. Such artificial lattices on SiC(0001) thus offer a novel platform for coexisting Coulomb correlations and spin-orbit coupling, with bearing for unusual magnetic phases and proposed topological quantum states of matter.
二维(2D)原子晶格提供了具有库仑相关性的模型设置,这种相关性会诱导出相互竞争的基态。在此,碳化硅(SiC)作为一种具有降低屏蔽效应的宽带隙衬底出现。我们基于实验实现和理论建模,报道了首个由锡(Sn)吸附原子在SiC(0001)上形成的人工高Z原子晶格。我们的三角结构模型的密度泛函理论与扫描隧道显微镜结果紧密吻合。光电子能谱数据显示出一个深能隙态(约2电子伏特的能隙),并且基于我们包含动态平均场理论的计算,我们认为这反映了一种显著的莫特绝缘情形。我们还发现有迹象表明该系统易受反铁磁超结构的影响。因此,在SiC(0001)上的这种人工晶格为共存的库仑相关性和自旋 - 轨道耦合提供了一个新颖的平台,这对于异常磁相和所提出的物质拓扑量子态具有重要意义。