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硅支撑的有机金属分子线的电子和磁性性质:密度泛函理论(DFT)研究。

Electronic and magnetic properties of silicon supported organometallic molecular wires: a density functional theory (DFT) study.

机构信息

Department of Chemistry, Key Laboratory of Environmentally Friendly Chemistry and Applications of Ministry of Education, Xiangtan University, Hunan Province 411105, P. R. China.

出版信息

Nanoscale. 2015 Aug 28;7(32):13734-46. doi: 10.1039/c5nr02608c. Epub 2015 Jul 29.

Abstract

The electronic and magnetic properties of transition metal (TM = Sc, Ti, V, Cr and Mn) atom incorporated single and double one-dimensional (1D) styrene molecular wires confined on the hydrogen-terminated Si(100) surface are explored for the first time by means of spin-polarized density functional theory, denoted as Si-[TM(styrene)]. It is unveiled that TM atoms bind asymmetrically to the adjacent phenyl rings, which leads to novel electronic and magnetic properties in stark contrast to the well-studied gas phase TM-benzene molecular wires. Si-[Mn(styrene)]∞ and Si-[Cr(styrene)]∞ single molecular wires (SMWs) are a ferromagnetic semiconductor and half metal, respectively. Creation of H-atom defects on the silicon surface can introduce an impurity metallic band, which leads to novel half-metallic magnetism of a Si-[Mn(styrene)]∞ system. Moreover, double molecular wires (DMWs) containing two identical or hetero SMWs are theoretically designed. The [Mn(styrene)]∞-[Cr(styrene)]∞ DMW exhibits half-metallic magnetism where the spin-up and spin-down channels are contributed by two single molecular wires. Finally, we demonstrate that introducing a TM-defect may significantly affect the electronic structure and magnetic properties of molecular wires. These studies provide new insights into the structure and properties of surface supported 1-D sandwiched molecular wires and may inspire the future experimental synthesis of substrate confined organometallic sandwiched molecular wires.

摘要

首次通过自旋极化密度泛函理论研究了过渡金属(TM = Sc、Ti、V、Cr 和 Mn)原子掺入单和双一维(1D)苯乙烯分子线在氢终止硅(100)表面上的电子和磁性质,记为 Si-[TM(苯乙烯)]。研究揭示 TM 原子不对称地结合到相邻的苯基环上,导致与研究充分的气相 TM-苯分子线相比具有新颖的电子和磁性质。Si-[Mn(苯乙烯)]∞和 Si-[Cr(苯乙烯)]∞单分子线(SMW)分别是铁磁半导体和半金属。在硅表面上创建 H 原子缺陷可以引入杂质金属带,从而导致 Si-[Mn(苯乙烯)]∞系统的新型半金属磁性。此外,还理论设计了包含两个相同或杂 SMW 的双分子线(DMW)。[Mn(苯乙烯)]∞-[Cr(苯乙烯)]∞ DMW 表现出半金属磁性,其中自旋向上和自旋向下通道由两个单分子线贡献。最后,我们证明了引入 TM 缺陷可能会显著影响分子线的电子结构和磁性质。这些研究为表面支持的 1D 夹心分子线的结构和性质提供了新的见解,并可能激发未来对基底限制的有机金属夹心分子线的实验合成。

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