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二维拓扑晶体绝缘体和 TlSe、TlS 单层中的拓扑相变。

Two-Dimensional Topological Crystalline Insulator and Topological Phase Transition in TlSe and TlS Monolayers.

机构信息

Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA , 52425 Jülich, Germany.

出版信息

Nano Lett. 2015 Sep 9;15(9):6071-5. doi: 10.1021/acs.nanolett.5b02299. Epub 2015 Aug 6.

Abstract

The properties that distinguish topological crystalline insulator (TCI) and topological insulator (TI) rely on crystalline symmetry and time-reversal symmetry, respectively, which encodes different bulk and surface/edge properties. Here, we predict theoretically that electron-doped TlM (M = S and Se) (110) monolayers realize a family of two-dimensional (2D) TCIs characterized by mirror Chern number CM = -2. Remarkably, under uniaxial strain (≈ 1%), a topological phase transition between 2D TCI and 2D TI is revealed with the calculated spin Chern number CS = -1 for the 2D TI. Using spin-resolved edge states analysis, we show different edge-state behaviors, especially at the time reversal invariant points. Finally, a TlBiSe2/NaCl quantum well is proposed to realize an undoped 2D TCI with inverted gap as large as 0.37 eV, indicating the high possibility for room-temperature observation.

摘要

电子掺杂 TlM(M=S 和 Se)(110)单层实现了一族具有特征为镜像陈数 CM = -2 的二维(2D)拓扑晶体绝缘体(TCI)。值得注意的是,在单轴应变(≈1%)下,通过计算得到的 2D TI 的自旋陈数 CS = -1,揭示了 2D TCI 和 2D TI 之间的拓扑相变。通过自旋分辨的边缘态分析,我们展示了不同的边缘态行为,特别是在时间反演不变点处。最后,提出了 TlBiSe2/NaCl 量子阱来实现具有高达 0.37eV 的反转能隙的未掺杂 2D TCI,表明在室温下观察到的可能性很高。

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