Chong Su Kong, Liu Lizhe, Watanabe Kenji, Taniguchi Takashi, Sparks Taylor D, Liu Feng, Deshpande Vikram V
Department of Physics and Astronomy, University of Utah, Salt Lake City, UT, 84112, USA.
Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA.
Nat Commun. 2022 Oct 27;13(1):6386. doi: 10.1038/s41467-022-33643-9.
As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped spectrum. Whether the surface hybridization gap can host topological edge states is still an open question. Herein, we provide transport evidence of 2D topological states in the quantum tunneling regime of a bulk insulating 3D TI BiSbTeSe. Different from its trivial insulating phase, this 2D topological state exhibits a finite longitudinal conductance at ~2e/h when the Fermi level is aligned within the surface gap, indicating an emergent quantum spin Hall (QSH) state. The transition from the QSH to quantum Hall (QH) state in a transverse magnetic field further supports the existence of this distinguished 2D topological phase. In addition, we demonstrate a second route to realize the 2D topological state via surface gap-closing and topological phase transition mechanism mediated by a transverse electric field. The experimental realization of the 2D topological phase in a 3D TI enriches its phase diagram and marks an important step toward functionalized topological quantum devices.
当三维(3D)拓扑绝缘体(TI)的厚度与表面态的穿透深度相当时,表面之间的量子隧穿会将其无隙狄拉克电子结构转变为带隙谱。表面杂化带隙是否能容纳拓扑边缘态仍是一个悬而未决的问题。在此,我们提供了在体绝缘3D TI BiSbTeSe的量子隧穿区域中二维拓扑态的输运证据。与平凡绝缘相不同,当费米能级处于表面带隙内时,这种二维拓扑态在~2e/h处表现出有限的纵向电导,表明出现了量子自旋霍尔(QSH)态。在横向磁场中从QSH态到量子霍尔(QH)态的转变进一步支持了这种独特二维拓扑相的存在。此外,我们展示了通过横向电场介导的表面带隙闭合和拓扑相变机制实现二维拓扑态的第二条途径。在3D TI中二维拓扑相的实验实现丰富了其相图,并标志着向功能化拓扑量子器件迈出了重要一步。