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使用拓扑绝缘体作为可饱和吸收体产生3微米中红外脉冲。

3-μm Mid-infrared pulse generation using topological insulator as the saturable absorber.

作者信息

Li Jianfeng, Luo Hongyu, Wang Lele, Zhao Chujun, Zhang Han, Li Heping, Liu Yong

出版信息

Opt Lett. 2015 Aug 1;40(15):3659-62. doi: 10.1364/OL.40.003659.

Abstract

We report an 1150-nm diode-pump passively Q-switched Ho3+-doped ZBLAN fiber laser using topological insulator (TI): Bi2Te3 as the saturable absorber (SA). The TI: Bi2Te3 prepared using the cost-effective hydrothermal intercalation/exfoliation method was dropped onto a CaF2 substrate to fabricate the free-space SA component. It has a low saturable peak intensity of 2.12  MW/cm2 and a high modulation depth of 51.3% measured at 2 μm. Inserting this component into a linear-cavity Ho3+-doped ZBLAN fiber laser, stable Q-switched pulses at 2979.9 nm were obtained with the repetition rate of 81.96 kHz and pulse duration of 1.37 μs. The achieved maximum output power and pulse energy were 327.4 mW at a slope efficiency of 11.6% and 3.99 μJ, respectively, only limited by the available pump power. Our work reveals that the TIs are absolutely a class of promising and reliable SAs for pulse generation at 3-μm mid-infrared waveband.

摘要

我们报道了一种采用拓扑绝缘体(TI):Bi2Te3作为可饱和吸收体(SA)的1150纳米二极管泵浦被动调Q掺Ho3+的ZBLAN光纤激光器。采用经济高效的水热插层/剥离法制备的TI:Bi2Te3被滴涂在CaF2衬底上,以制造自由空间SA组件。在2μm波长下测量,其具有2.12 MW/cm2的低可饱和峰值强度和51.3%的高调制深度。将该组件插入线性腔掺Ho3+的ZBLAN光纤激光器中,获得了中心波长为2979.9 nm的稳定调Q脉冲,重复频率为81.96 kHz,脉冲宽度为1.37 μs。仅受可用泵浦功率限制,实现的最大输出功率和脉冲能量分别为327.4 mW,斜率效率为11.6%,脉冲能量为3.99 μJ。我们的工作表明,拓扑绝缘体绝对是一类用于3μm中红外波段脉冲产生的有前景且可靠的可饱和吸收体。

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