Hsu Che-Chen, Su Heng-Wei, Hou Cheng-Hung, Shyue Jing-Jong, Tsai Feng-Yu
Department of Materials Science and Engineering National Taiwan University, Taipei 106, Taiwan.
Nanotechnology. 2015 Sep 25;26(38):385201. doi: 10.1088/0957-4484/26/38/385201. Epub 2015 Aug 28.
NiO is an attractive hole-transporting material for polymer solar cells (PSCs) owing to its excellent stability and electrical/optical properties. This study demonstrates, for the first time, fabrication of uniform, defect-free, and conformal NiO ultra-thin films for use as hole-transporting layers (HTLs) in PSCs by atomic layer deposition (ALD) through optimization of the ALD processing parameters. The morphological, optical, and electrical properties of ALD NiO films were determined to be favorable for their HTL application. As a result, PSCs containing an ALD NiO HTL with an optimized thickness of 4 nm achieved a power conversion efficiency (PCE) of 3.4%, which was comparable to that of a control device with a poly(3,4-ethylenedioxy-thiophene):poly(styrene-sulfonate) HTL. The high quality and manufacturing scalability of ALD NiO films demonstrated here will facilitate the adoption of NiO HTLs in PSCs.
由于具有优异的稳定性以及电学和光学性能，氧化镍（NiO）是聚合物太阳能电池（PSC）极具吸引力的空穴传输材料。本研究首次通过优化原子层沉积（ALD）工艺参数，利用ALD制备出均匀、无缺陷且保形的NiO超薄膜，用作PSC的空穴传输层（HTL）。经测定，ALD NiO薄膜的形态、光学和电学性能有利于其作为HTL的应用。结果，含有优化厚度为4 nm的ALD NiO HTL的PSC实现了3.4%的功率转换效率（PCE），这与具有聚（3,4 - 乙撑二氧噻吩）：聚（苯乙烯磺酸盐）HTL的对照器件相当。本文展示的ALD NiO薄膜的高质量和制造可扩展性将推动NiO HTL在PSC中的应用。
