Cho Jun Hee, Lee Sang-Ick, Kim Jong Hyun, Yim Sang Jun, Shin Hyung Soo, Han Mi Jeong, Chae Won Mook, Lee Sung Duck, Ahn Chi Young, Kim Myong-Woon
J Nanosci Nanotechnol. 2015 Jan;15(1):382-5. doi: 10.1166/jnn.2015.8329.
Zirconium based thin film have been deposited by atomic layer deposition (ALD) process using Zr and Si containing Zr precursor with ozone as oxidant. We have pursued a means to control composition by varying Zr and Si containing precursor by cycle frequency. The molar ratio of Si to Zr in the Zr based films was 0.2, 0.25, 0.33, and 0.5. Addition of Si containing Zr precursor on Zirconium based thin films was effective for the decrease of the roughness, while an increase of density. XPS analysis indicated that the addition of Si containing Zr precursors in the Zr based film formed the silicate structure. The XRD analysis of the all ZrO2-SiO2 mixed films annealed at 600 degrees C for 5 min indicated the presence of amorphous. However, the ZrO2 film showed diffraction peaks at 2θ = 30.6 degrees due to the presence of the Tetragonal ZrO2. The incorporation of Si into ZrO2 films helps stabilize an amorphous structure during deposition and annealing. The Zr based thin film (Si/Zr = 0.25) exhibited that the leakage current density was 6.2 x 10(-7) A/cm2 at a bias of - 1.5 V.
采用含锆和硅的锆前驱体，以臭氧作为氧化剂，通过原子层沉积（ALD）工艺沉积了锆基薄膜。我们通过改变含锆和硅前驱体的循环频率来控制成分。锆基薄膜中硅与锆的摩尔比为0.2、0.25、0.33和0.5。在锆基薄膜上添加含硅锆前驱体可有效降低粗糙度，同时提高密度。X射线光电子能谱（XPS）分析表明，在锆基薄膜中添加含硅锆前驱体形成了硅酸盐结构。对在600℃退火5分钟的所有ZrO₂ - SiO₂混合薄膜进行X射线衍射（XRD）分析，结果表明存在非晶态。然而，由于四方ZrO₂的存在，ZrO₂薄膜在2θ = 30.6°处出现衍射峰。在ZrO₂薄膜中掺入硅有助于在沉积和退火过程中稳定非晶态结构。锆基薄膜（Si/Zr = 0.25）在-1.5 V偏压下的漏电流密度为6.2×10⁻⁷ A/cm²。
