Sheng Yuewen, Rong Youmin, He Zhengyu, Fan Ye, Warner Jamie H
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.
Nanotechnology. 2015 Oct 2;26(39):395601. doi: 10.1088/0957-4484/26/39/395601. Epub 2015 Sep 9.
Graphene grown by chemical vapor deposition (CVD) on copper foils is a viable method for large area films for transparent conducting electrode (TCE) applications. We examine the spatial uniformity of large area films on the centimeter scale when transferred onto both Si substrates with 300 nm oxide and flexible transparent polyethylene terephthalate substrates. A difference in the quality of graphene, as measured by the sheet resistance and transparency, is found for the areas at the edges of large sheets that depends on the supporting boat used for the CVD growth. Bilayer graphene is grown with uniform properties on the centimeter scale when a flat support is used for CVD growth. The flat support provides consistent delivery of precursor to the copper catalyst for graphene growth. These results provide important insights into the upscaling of CVD methods for growing high quality graphene and its transfer onto flexible substrates for potential applications as a TCE.
通过化学气相沉积(CVD)在铜箔上生长石墨烯是制备用于透明导电电极(TCE)应用的大面积薄膜的可行方法。当转移到具有300nm氧化物的硅基板和柔性透明聚对苯二甲酸乙二醇酯基板上时,我们研究了厘米尺度上大面积薄膜的空间均匀性。通过薄层电阻和透明度测量发现,大片石墨烯边缘区域的质量存在差异,这取决于用于CVD生长的支撑舟皿。当使用平面支撑进行CVD生长时,双层石墨烯在厘米尺度上具有均匀的性质。平面支撑为石墨烯生长的铜催化剂提供了一致的前驱体输送。这些结果为扩大CVD方法以生长高质量石墨烯及其转移到柔性基板上作为TCE的潜在应用提供了重要见解。