基于合金增强压电势的 Alx Ga1-x N 薄膜超高灵敏压电器件

Ultrasensitive Thin-Film-Based Alx Ga1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential.

机构信息

Department of Materials Science and Engineering, National Cheng Kung University, Tainan City, 70101, Taiwan.

Department of Optics and Photonics, National Central University, Jhongli City, Taoyuan County, 32001, Taiwan.

出版信息

Adv Mater. 2015 Oct 28;27(40):6289-95. doi: 10.1002/adma.201502314. Epub 2015 Sep 9.

DOI:10.1002/adma.201502314

PMID:26349632

Abstract

Alx Ga1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Alx Ga1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

摘要

通过将氮化铝（AlN）与氮化镓（GaN）合金化，制备出基于 AlxGa1-xN 薄膜的压电器件应变传感器，具有超高的应变灵敏度。三元化合物 AlxGa1-xN 的应变灵敏度高于单个二元化合物 GaN 和 AlN。这种高性能可归因于通过将 Al 原子插入 GaN 基质中增强压电常数、残余应变的影响以及抑制的屏蔽效应。