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通过多孔侧壁的化学氧化直接观察硅的金属辅助化学蚀刻中的蚀刻轨迹

Direct Visualization of Etching Trajectories in Metal-Assisted Chemical Etching of Si by the Chemical Oxidation of Porous Sidewalls.

作者信息

Yoon Sung-Soo, Khang Dahl-Young

机构信息

Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.

出版信息

Langmuir. 2015 Sep 29;31(38):10549-54. doi: 10.1021/acs.langmuir.5b02453. Epub 2015 Sep 16.

Abstract

We demonstrate a simple method for the visualization of trajectories traced by noble metal nanoparticles during metal-assisted chemical etching (MaCE) of Si. The nanoporous Si layer formed around drilled pores is converted into SiO2 by simple chemical oxidation. Etch removal of the remaining Si using alkali hydroxide leaves SiO2 nanostructures that are the exact replica of those drilled pores or etching trajectories. The differences in etching characteristics between Ag and Au have been investigated using the proposed visualization method. The shape and chemical stability of metal nanoparticles used for MaCE have been found to be critical in determining etching paths. The proposed method would be very helpful in studying the fundamental mechanism of MaCE as well as in micro/nanostructuring of the Si surface for various applications. This approach can also be used for the generation of straight or helical SiO2 nanotubes.

摘要

我们展示了一种简单的方法,用于可视化贵金属纳米颗粒在硅的金属辅助化学蚀刻(MaCE)过程中所追踪的轨迹。通过简单的化学氧化,围绕钻孔形成的纳米多孔硅层会转化为二氧化硅。使用氢氧化碱蚀刻去除剩余的硅后,会留下二氧化硅纳米结构,这些结构是那些钻孔或蚀刻轨迹的精确复制品。利用所提出的可视化方法研究了银和金之间蚀刻特性的差异。已发现用于MaCE的金属纳米颗粒的形状和化学稳定性对于确定蚀刻路径至关重要。所提出的方法对于研究MaCE的基本机制以及在硅表面进行各种应用的微/纳米结构化将非常有帮助。这种方法还可用于生成直的或螺旋状的二氧化硅纳米管。

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