Volovlikova Olga, Shilyaeva Yulia, Silakov Gennady, Fedorova Yulia, Maniecki Tomasz, Gavrilov Sergey
Institute of Advanced Materials and Technologies, National Research University of Electronic Technology (MIET), Moscow 124498, Russia.
Scientific-Manufacturing Complex 'Technological Centre', Moscow 124498, Russia.
Nanotechnology. 2022 Mar 15;33(23). doi: 10.1088/1361-6528/ac56f6.
In this paper, we are reporting on the fabrication of a porous silicon/Au and silicon filament/Au using the two-step Au-assisted chemical etching of p-type Si with a specific resistivity of 0.01, 1, and 12 Ω·cm when varying the Au deposition times. The structure analysis results show that with an increasing Au deposition time of up to 7 min, the thickness of the porous Si layer increases for the same etching duration (60 min), and the morphology of the layer changes from porous to filamentary. This paper shows that the uniform macro-porous layers with a thickness of 125.5-171.2m and a specific surface area of the mesopore sidewalls of 142.5-182 m·gare formed on the Si with a specific resistivity of 0.01 Ω·cm. The gradient macro-porous layers with a thickness of 220-260m and 210-290m, the specific surface area of the mesopore sidewalls of 3.7-21.7 m·gand 17-29 m·gare formed on the silicon with a specific resistivity of 1 and 12 Ω·cm, respectively. The por-Si/Au has excellent low-temperature electro oxidation performance with ethanol, the activity of ethanol oxidation is mainly due to the synergistic effect of the Au nanoparticles and porous Si. The formation mechanism of the uniform and gradient macro-porous layers and ethanol electro-oxidation on the porous/filament silicon, decorated with Au nanoparticles, was established. The por-Si/Au structures with perpendicularly oriented pores, a high por-Si layer thickness, and a low mono-Si layer thickness (with a specific resistivity of 1 Ω·cm) are optimal for an effective ethanol electro-oxidation, which has been confirmed with chronoamperometry measurements.
在本文中，我们报告了通过两步金辅助化学蚀刻法制备多孔硅/金和硅丝/金的过程，该方法用于对电阻率分别为0.01、1和12 Ω·cm的p型硅进行蚀刻，同时改变金沉积时间。结构分析结果表明，在相同蚀刻时间（60分钟）下，随着金沉积时间增加至7分钟，多孔硅层的厚度增加，且该层的形态从多孔状变为丝状。本文表明，在电阻率为0.01 Ω·cm的硅上形成了厚度为125.5 - 171.2μm且中孔侧壁比表面积为142.5 - 182 m²·g⁻¹的均匀大孔层。在电阻率为1和12 Ω·cm的硅上分别形成了厚度为220 - 260μm和210 - 290μm、中孔侧壁比表面积为3.7 - 21.7 m²·g⁻¹和17 - 29 m²·g⁻¹的梯度大孔层。多孔硅/金对乙醇具有优异的低温电氧化性能，乙醇氧化活性主要归因于金纳米颗粒与多孔硅的协同效应。建立了在装饰有金纳米颗粒的多孔/丝状硅上均匀和梯度大孔层的形成机制以及乙醇电氧化机制。具有垂直取向孔、高多孔硅层厚度和低单晶硅层厚度（电阻率为1 Ω·cm）的多孔硅/金结构对于有效的乙醇电氧化是最优的，这已通过计时电流法测量得到证实。
