Xu Yiguo, Bai Xiaojing, Zha Xianhu, Huang Qing, He Jian, Luo Kan, Zhou Yuhong, Germann Timothy C, Francisco Joseph S, Du Shiyu
Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, China.
Laboratory of Biotechnology, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China.
J Chem Phys. 2015 Sep 21;143(11):114707. doi: 10.1063/1.4931398.
In the present work, the behavior of He in the MAX phase Ti3AlC2 material is investigated using first-principle methods. It is found that, according to the predicted formation energies, a single He atom favors residing near the Al plane in Ti3AlC2. The results also show that Al vacancies are better able to trap He atoms than either Ti or C vacancies. The formation energies for the secondary vacancy defects near an Al vacancy or a C vacancy are strongly influenced by He impurity content. According to the present results, the existence of trapped He atoms in primary Al vacancy can promote secondary vacancy formation and the He bubble trapped by Al vacancies has a higher tendency to grow in the Al plane of Ti3AlC2. The diffusion of He in Ti3AlC2 is also investigated. The energy barriers are approximately 2.980 eV and 0.294 eV along the c-axis and in the ab plane, respectively, which means that He atoms exhibit faster migration parallel to the Al plane. Hence, the formation of platelet-like bubbles nucleated from the Al vacancies is favored both energetically and kinetically. Our calculations also show that the conventional spherical bubbles may be originated from He atoms trapped by C vacancies. Taken together, these results are able to explain the observed formation of bubbles in various shapes in recent experiments. This study is expected to provide new insight into the behaviors of MAX phases under irradiation from electronic structure level in order to improve the design of MAX phase based materials.
在本工作中,采用第一性原理方法研究了氦在MAX相Ti3AlC2材料中的行为。研究发现,根据预测的形成能,单个氦原子倾向于驻留在Ti3AlC2的Al平面附近。结果还表明,Al空位比Ti或C空位更能捕获氦原子。Al空位或C空位附近的二次空位缺陷的形成能受氦杂质含量的强烈影响。根据目前的结果,初级Al空位中捕获的氦原子的存在可以促进二次空位的形成,并且Al空位捕获的氦气泡在Ti3AlC2的Al平面中具有更高的生长趋势。还研究了氦在Ti3AlC2中的扩散。沿c轴和ab平面的能垒分别约为2.980 eV和0.294 eV,这意味着氦原子在平行于Al平面的方向上表现出更快的迁移。因此,从Al空位形核的片状气泡的形成在能量和动力学上都是有利的。我们的计算还表明,传统的球形气泡可能起源于被C空位捕获的氦原子。综上所述,这些结果能够解释最近实验中观察到的各种形状气泡的形成。本研究有望从电子结构层面为MAX相在辐照下的行为提供新的见解,以改进基于MAX相的材料设计。