Wang Yibo, Peng Zhenbo, Qiu Nianxiang, He Heming, Pan Rongjian, Wu Lu, Huang Qing, Du Shiyu
Engineering Laboratory of Nuclear Energy Materials, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences Ningbo Zhejiang 315201 P. R. China
Institute of Energy Storage & Conversion Technology, Ningbo Polytechnic China.
RSC Adv. 2021 Aug 5;11(43):26920-26927. doi: 10.1039/d1ra04031f. eCollection 2021 Aug 2.
Uranium silicide USi has been explored as an advanced nuclear fuel component for light water reactor to enhance the accident tolerance. In this paper, in order to understand the fuel performance of USi, the primary point defects, secondary point defects, and the dissolution of He gas were studied by first-principles methods. Compared with U atoms and another type of Si atoms, Si atoms far from intrinsic Si vacancies are more likely to form point defects, implying that Si vacancies are prone to form separate single vacancies rather than vacancy clusters in the initial stage. From the calculated anti-site defect energies, it can be predicted that non-stoichiometric U-rich phase of USi are more likely to be formed than Si-rich phase, which are consistent with the chemical analysis of experimentally sintered Si-lean USi sample. It can be found that a single He atom favors residence in the interstitial site in the U layer directly above/below the intrinsic vacancy. It can also be seen that Vac-U, Vac-Si, and Vac-Si vacancies can energetically accommodate up to 4, 0, and 3 He atoms, respectively. The formation of secondary vacancy defects is strongly dependent on the helium concentration. The current results show that the He-filled vacancy can promote the formation of adjacent secondary vacancy, leading to the formation of gas bubbles. This work may provide theoretical insights into the He irradiation-induced damage in USi as well as provide valuable clues for improving the design of the UN-USi composite fuel.
硅化铀(USi)已被探索用作轻水反应堆的先进核燃料组件,以提高事故耐受性。在本文中,为了了解USi的燃料性能,采用第一性原理方法研究了主要点缺陷、次级点缺陷以及氦气的溶解情况。与U原子和另一种类型的Si原子相比,远离本征Si空位的Si原子更易形成点缺陷,这意味着在初始阶段Si空位易于形成单独的单空位而非空位团簇。从计算得到的反位缺陷能量可以预测,USi中富U的非化学计量相比富Si相更易形成,这与实验烧结的贫Si的USi样品的化学分析结果一致。可以发现单个He原子倾向于占据本征空位正上方/正下方U层中的间隙位置。还可以看出,Vac-U、Vac-Si和Vac-Si空位在能量上分别最多可容纳4个、0个和3个He原子。次级空位缺陷的形成强烈依赖于氦浓度。当前结果表明,充满He的空位可促进相邻次级空位的形成,从而导致气泡的形成。这项工作可能为USi中He辐照引起的损伤提供理论见解,并为改进UN-USi复合燃料的设计提供有价值的线索。