Iñarrea Jesús, Platero Gloria
Escuela Politécnica Superior, Universidad Carlos III, Leganes, Madrid 28911, Spain. Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, Cantoblanco, Madrid 28049, Spain.
J Phys Condens Matter. 2015 Oct 21;27(41):415801. doi: 10.1088/0953-8984/27/41/415801. Epub 2015 Sep 28.
We report on a theoretical study about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas hosted in a pure Ge/SiGe quantum well. Similarly to electrons we obtain radiation-induced resistance oscillations and zero resistance states. We analytically deduce a universal expression for the irradiated magnetoresistance, explaining the origin of the minima positions and their 1/4 cycle phase shift. The outcome is that these phenomena are universal and only depend on radiation and cyclotron frequencies. We also study the possibility of having simultaneously two different carriers driven by radiation: light and heavy holes. As a result the calculated magnetoresistance reveals an interference profile due to the different effective masses of the two types of carriers.
我们报告了一项关于处理p型半导体和空穴而非电子时微波诱导电阻振荡和零电阻状态的理论研究。我们考虑了存在于纯Ge/SiGe量子阱中的高迁移率二维空穴气。与电子类似，我们获得了辐射诱导电阻振荡和零电阻状态。我们通过分析推导出了辐照磁阻的通用表达式，解释了最小值位置的起源及其1/4周期的相移。结果表明，这些现象具有普遍性，仅取决于辐射频率和回旋频率。我们还研究了同时存在由辐射驱动的两种不同载流子（轻空穴和重空穴）的可能性。结果，计算出的磁阻揭示了由于两种载流子有效质量不同而产生的干涉图谱。
