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氮掺杂和硼掺杂黑磷烯的原子结构与电子结构

The atomic and electronic structure of nitrogen- and boron-doped phosphorene.

作者信息

Boukhvalov Danil W

机构信息

Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791, Korea.

出版信息

Phys Chem Chem Phys. 2015 Oct 28;17(40):27210-6. doi: 10.1039/c5cp05071e.

Abstract

First principles modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward the formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation into -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provides flat bands and further transformation of these pairs into hexagonal BN lines and ribbons across the phosphorene chains.

摘要

氮掺杂和硼掺杂磷烯的第一性原理建模表明了形成高度有序结构的趋势。氮掺杂导致形成-N-P-P-P-N-线。随着带隙增加和氮浓度增加,磷烯链上会进一步转变为-P-N-P-N-线,这与氮掺杂磷烯化学活性降低相吻合。与氮的情况不同,硼原子倾向于形成-B-B-对,并沿磷烯链进一步形成-P-P-B-B-P-P-图案。低浓度的硼掺杂剂可将磷烯从半导体转变为半金属,同时增强其化学活性。硼和氮对磷烯的共掺杂始于形成-B-N-对,这提供了平带,并且这些对会进一步转变为横跨磷烯链的六边形BN线和带。

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