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Unraveling the luminescence signatures of chemical defects in polyethylene.

作者信息

Chen Lihua, Tran Huan Doan, Wang Chenchen, Ramprasad Rampi

机构信息

Department of Materials Science and Engineering, Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, Connecticut 06269, USA.

出版信息

J Chem Phys. 2015 Sep 28;143(12):124907. doi: 10.1063/1.4931986.

Abstract

Chemical defects in polyethylene (PE) can deleteriously downgrade its electrical properties and performance. Although these defects usually leave spectroscopic signatures in terms of characteristic luminescence peaks, it is nontrivial to make unambiguous assignments of the peaks to specific defect types. In this work, we go beyond traditional density functional theory calculations to determine intra-defect state transition and charge recombination process derived emission and absorption energies in PE. By calculating the total energy differences of the neutral defect at excited and ground states, the emission energies from intra-defect state transition are obtained, reasonably explaining the photoluminescence peaks in PE. In order to study the luminescence emitted in charge recombination processes, we characterize PE defect levels in terms of thermodynamic and optical charge transition levels that involve total energy calculations of neutral and charged defects. Calculations are performed at several levels of theory including those involving (semi)local and hybrid electron exchange-correlation functionals, and many-body perturbation theory. With these critical elements, the emission energies are computed and further used to clarify and confirm the origins of the observed electroluminescence and thermoluminescence peaks.

摘要

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