E Yanxiong, Hao Zhibiao, Yu Jiadong, Wu Chao, Liu Runze, Wang Lai, Xiong Bing, Wang Jian, Han Yanjun, Sun Changzheng, Luo Yi
Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China.
Nanoscale Res Lett. 2015 Dec;10(1):383. doi: 10.1186/s11671-015-1083-0. Epub 2015 Oct 5.
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.
通过引入铝化工艺以实现纳米线（NWs）的成核，利用等离子体辅助分子束外延在硅衬底上实现了AlN纳米线的自发生长。AlN纳米线由铝化工艺形成的核生长而成，纳米线的密度和直径可通过铝化参数进行控制。仔细研究了生长条件对AlN纳米线形貌的影响。由于Al吸附原子的迁移能力较差，发现纳米线之间生长出岛状薄膜。已证明这些薄膜是Al极性的，与N极性的AlN纳米线不同，这可以解释新形成的纳米线为何不存在。增加V/III比可有效抑制Al极性AlN薄膜的生长。
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