采用原位镀铋膜电极吸附溶出伏安法测定痕量镓（III）
Determination of trace amounts of Ga(III) by adsorptive stripping voltammetry with in situ plated bismuth film electrode.
作者信息
Grabarczyk Malgorzata, Wasąg Joanna
机构信息
Department of Analytical Chemistry and Instrumental Analysis, Chemical Faculty, Maria Curie-Sklodowska University, 20-031 Lublin, Poland.
Department of Analytical Chemistry and Instrumental Analysis, Chemical Faculty, Maria Curie-Sklodowska University, 20-031 Lublin, Poland.
出版信息
Talanta. 2015 Nov 1;144:1091-5. doi: 10.1016/j.talanta.2015.07.083. Epub 2015 Jul 30.
The determination of trace gallium using adsorptive stripping voltammetry at an in situ plated bismuth film electrode was described. The method was based on simultaneous film formation and the Ga(III)-cupferron complex preconcentration at -0.65 V and its cathodic stripping during the potential scan. The effect of Bi(III) and cupferron concentration, the influence of deposition potential and time, and the scan rate on the determination of Ga(III) were studied. A linear response in the concentration range of 3×10(-10) to 3×10(-7) mol L(-1) (r=0.998) was obtained with detection limit of 1.05×10(-10) mol L(-1) using accumulation time of 180 s. Finally, the bismuth film electrode was successfully applied for the determination of Ga(III) in certified reference material seawater NASS-5 with satisfactory results.
描述了使用原位镀铋膜电极上的吸附溶出伏安法测定痕量镓的方法。该方法基于在-0.65 V同时形成膜以及Ga(III)-铜铁试剂络合物的预富集及其在电位扫描期间的阴极溶出。研究了Bi(III)和铜铁试剂浓度、沉积电位和时间以及扫描速率对Ga(III)测定的影响。使用180 s的积累时间，在3×10(-10)至3×10(-7) mol L(-1)的浓度范围内获得了线性响应（r = 0.998），检测限为1.05×10(-10) mol L(-1)。最后，铋膜电极成功应用于认证参考物质海水NASS-5中Ga(III)的测定，结果令人满意。
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