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高导电性叔丁硫醇包覆的CuInS2纳米晶体的直接合成

Direct Synthesis of Highly Conductive tert-Butylthiol-Capped CuInS2 Nanocrystals.

作者信息

Lefrançois Aurélie, Pouget Stéphanie, Vaure Louis, Lopez-Haro Miguel, Reiss Peter

机构信息

Univ. Grenoble Alpes, INAC-SPrAM, 38054, Grenoble Cedex 9, France.

CEA, INAC-SPrAM, Laboratoire d'Electronique Moleculaire, Organique et Hybride, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France.

出版信息

Chemphyschem. 2016 Mar 3;17(5):654-9. doi: 10.1002/cphc.201500800. Epub 2015 Oct 14.

Abstract

tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5 nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 Å. Their comparably large optical and electrochemical band gap of 2.6-2.7 eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04 In0.96 S1.84 I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.) 10(-2)  S m(-1) , which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs.

摘要

叔丁硫醇(tBuSH)在合成CuInS2纳米晶体(NCs)中用作硫源、表面配体和共溶剂。所提出的方法可直接获得短配体封端的NCs,无需进行合成后配体交换。所制备的5纳米CuInS2 NCs结晶为立方闪锌矿相,空间群为F-43m,晶格参数a = 5.65 Å。它们具有2.6 - 2.7 eV相对较大的光学和电化学带隙,这归因于碘掺入晶体结构中,能量散射X射线能谱(EDX)测定的组成Cu1.04In0.96S1.84I0.62反映了这一点。对叔丁硫醇封端的NCs薄膜进行的电导率测量结果为2.5(.)10(-2) S m(-1),与已有的十二烷硫醇封端的CuInS2 NCs相比,这一数值增加了400倍。

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