Lefrançois Aurélie, Pouget Stéphanie, Vaure Louis, Lopez-Haro Miguel, Reiss Peter
Univ. Grenoble Alpes, INAC-SPrAM, 38054, Grenoble Cedex 9, France.
CEA, INAC-SPrAM, Laboratoire d'Electronique Moleculaire, Organique et Hybride, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France.
Chemphyschem. 2016 Mar 3;17(5):654-9. doi: 10.1002/cphc.201500800. Epub 2015 Oct 14.
tert-butylthiol (tBuSH) is used as the sulfur source, surface ligand and co-solvent in the synthesis of CuInS2 nanocrystals (NCs). The presented method gives direct access to short-ligand-capped NCs without post-synthetic ligand exchange. The obtained 5 nm CuInS2 NCs crystallize in the cubic sphalerite phase with space group F-43m and a lattice parameter a=5.65 Å. Their comparably large optical and electrochemical band gap of 2.6-2.7 eV is attributed to iodine incorporation into the crystal structure as reflected by the composition Cu1.04 In0.96 S1.84 I0.62 determined by EDX. Conductivity measurements on thin films of the tBuSH-capped NCs result in a value of 2.5(.) 10(-2) S m(-1) , which represents an increase by a factor of 400 compared to established dodecanethiol-capped CuInS2 NCs.
叔丁硫醇（tBuSH）在合成CuInS2纳米晶体（NCs）中用作硫源、表面配体和共溶剂。所提出的方法可直接获得短配体封端的NCs，无需进行合成后配体交换。所制备的5纳米CuInS2 NCs结晶为立方闪锌矿相，空间群为F-43m，晶格参数a = 5.65 Å。它们具有2.6 - 2.7 eV相对较大的光学和电化学带隙，这归因于碘掺入晶体结构中，能量散射X射线能谱（EDX）测定的组成Cu1.04In0.96S1.84I0.62反映了这一点。对叔丁硫醇封端的NCs薄膜进行的电导率测量结果为2.5(.)10(-2) S m(-1)，与已有的十二烷硫醇封端的CuInS2 NCs相比，这一数值增加了400倍。
