Zhou Wu-Xing, Chen Ke-Qiu
Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China.
Sci Rep. 2015 Oct 14;5:15070. doi: 10.1038/srep15070.
By using first-principles calculations combined with the phonon Boltzmann transport equation, we systematically investigate the phonon transport of monolayer WSe2. Compared with other 2D materials, the monolayer WSe2 is found to have an ultralow thermal conductivity due to the ultralow Debye frequency and heavy atom mass. The room temperature thermal conductivity for a typical sample size of 1 μm is 3.935 W/m K, which is one order of magnitude lower than that of MoS2. And the room temperature thermal conductivity can be further decreased by about 95% in 10 nm sized samples. Moreover, we also find the ZA phonons have the dominant contribution to the thermal conductivity, and the relative contribution is almost 80% at room temperature, which is remarkably higher than that for monolayer MoS2. This is because the ZA phonons have longer lifetime than that of LA and TA phonons in monolayer WSe2.
通过结合第一性原理计算和声子玻尔兹曼输运方程,我们系统地研究了单层二硒化钨(WSe2)的声子输运。与其他二维材料相比,由于德拜频率超低和原子质量大,发现单层WSe2具有超低的热导率。对于典型尺寸为1μm的样品,室温热导率为3.935W/m K,比二硫化钼(MoS2)低一个数量级。在尺寸为10nm的样品中,室温热导率可进一步降低约95%。此外,我们还发现ZA声子对热导率的贡献占主导,在室温下相对贡献几乎为80%,这明显高于单层MoS2。这是因为在单层WSe2中,ZA声子的寿命比LA和TA声子的寿命长。