Guo San-Dong, Liu Jiang-Tao
School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an, 710121, Shaanxi, China.
Phys Chem Chem Phys. 2017 Dec 6;19(47):31982-31988. doi: 10.1039/c7cp05579j.
Phonon transport in group-VA element (As, Sb and Bi) monolayer semiconductors has been widely investigated in theory, and, of them, monolayer Sb (antimonene) has recently been synthesized. In this work, phonon transport in monolayer SbAs is investigated with a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of monolayer SbAs is lower than those of both monolayer As and Sb, and the corresponding sheet thermal conductance is 28.8 W K at room temperature. To understand the lower lattice thermal conductivity in monolayer SbAs than those in monolayer As and Sb, the group velocities and phonon lifetimes of monolayer As, SbAs and Sb are calculated. The calculated results show that the group velocities of monolayer SbAs are between those of monolayer As and Sb, but that the phonon lifetimes of SbAs are smaller than those of both monolayer As and Sb. Hence, the low lattice thermal conductivity in monolayer SbAs is attributed to very small phonon lifetimes. Unexpectedly, the ZA branch has very little contribution to the total thermal conductivity, only 2.4%, which is obviously different from those of monolayer As and Sb with very large contributions. This can be explained by very small phonon lifetimes for the ZA branch of monolayer SbAs. The lower lattice thermal conductivity of monolayer SbAs compared to that of monolayer As or Sb can be understood by the alloying of As (Sb) with Sb (As), which should introduce phonon point defect scattering. We also consider the isotope and size effects on the lattice thermal conductivity. It is found that isotope scattering produces a neglectful effect, and the lattice thermal conductivity with a characteristic length smaller than 30 nm can reach a decrease of about 47%. These results may offer perspectives on tuning the lattice thermal conductivity by the mixture of multiple elements for applications of thermal management and thermoelectricity, and motivate further experimental efforts to synthesize monolayer SbAs.
VA族元素(砷、锑和铋)单层半导体中的声子输运在理论上已得到广泛研究,其中,单层锑(锑烯)最近已被合成。在这项工作中,结合第一性原理计算和线性化声子玻尔兹曼方程,对单层锑化砷中的声子输运进行了研究。研究发现,单层锑化砷的晶格热导率低于单层砷和单层锑的晶格热导率,在室温下相应的面内热导为28.8 W/K。为了理解单层锑化砷的晶格热导率低于单层砷和单层锑的原因,计算了单层砷、锑化砷和锑的群速度和声子寿命。计算结果表明,单层锑化砷的群速度介于单层砷和单层锑之间,但锑化砷的声子寿命小于单层砷和单层锑的声子寿命。因此,单层锑化砷的低晶格热导率归因于非常小的声子寿命。出乎意料的是,ZA支对总热导率的贡献非常小,仅为2.4%,这与单层砷和单层锑中贡献非常大的情况明显不同。这可以用单层锑化砷的ZA支非常小的声子寿命来解释。与单层砷或单层锑相比,单层锑化砷较低的晶格热导率可以通过砷(锑)与锑(砷)的合金化来理解,这应该会引入声子点缺陷散射。我们还考虑了同位素和尺寸对晶格热导率的影响。研究发现,同位素散射产生的影响可以忽略不计,特征长度小于30 nm时,晶格热导率可降低约47%。这些结果可能为通过多种元素的混合来调节晶格热导率以用于热管理和热电应用提供思路,并促使进一步开展实验工作来合成单层锑化砷。