被动调Q Nd:YAG/Cr(4+):YAG键合晶体微芯片激光器在1112纳米波长下工作及其在二次谐波产生中的应用。

Passively Q-switched Nd:YAG/Cr(4+):YAG bonded crystal microchip laser operating at 1112 nm and its application for second-harmonic generation.

作者信息

Fu S G, Ouyang X Y, Liu X J

出版信息

Appl Opt. 2015 Oct 10;54(29):8804-7. doi: 10.1364/AO.54.008804.

DOI:10.1364/AO.54.008804

Abstract

A passively Q-switched Nd:YAG/Cr:YAG microchip laser operating at 1112 nm is demonstrated. Under a pump power of 5.5 W, a maximum average output power of 623 mW was obtained with T=6% output coupler, corresponding to an optical-to-optical conversion efficiency of 11.3% and a slope efficiency of 19.5%. The minimum pulse width was 2.8 ns, the pulse energy and peak power were 39.3 μJ and 14 kW, respectively. Additionally, based on the 1112 nm laser, a 230 mW 556 nm green-yellow laser was achieved within an LBO crystal.

摘要

展示了一种工作在1112纳米的被动调Q钕:钇铝石榴石/铬:钇铝石榴石微芯片激光器。在5.5瓦的泵浦功率下，使用6%输出耦合器时获得了623毫瓦的最大平均输出功率，对应的光光转换效率为11.3%，斜率效率为19.5%。最小脉宽为2.8纳秒，脉冲能量和峰值功率分别为39.3微焦和14千瓦。此外，基于1112纳米激光器，在一块LBO晶体中实现了230毫瓦的556纳米绿黄色激光器。