Subramaniam Chandramouli, Sekiguchi Atsuko, Yamada Takeo, Futaba Don N, Hata Kenji
Technology Research Association for Single Wall Carbon Nanotubes (TASC), Currently at Department of Chemistry, Indian Institute of Technology Bombay, Powai, Mumbai 400076, Maharashtra, India.
Nanotube Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan.
Nanoscale. 2016 Feb 21;8(7):3888-94. doi: 10.1039/c5nr03762j.
New lithographically processable materials with high ampacity are in demand to meet the increasing requirement for high operational current density at high temperatures existing in current pathways within electronic devices. To meet this demand, we report an approach to fabricate a high ampacity (∼100 times higher than Cu) carbon nanotube-copper (CNT-Cu) composite into a variety of complex nano-scale, planar and multi-tiered current pathways. The approach involved the use of a two-stage electrodeposition of copper into a pre-patterned template of porous, thin CNT sheets acting as the electrode. The versatility of this approach enabled the realization of completely suspended multi-tier, dielectric-less 'air-gap' CNT-Cu circuits that could be electrically isolated from each other and are challenging to fabricate with pure Cu or any metal. Importantly, all such complex structures, ranging from 500 nm to 20 μm in width, exhibited ∼100-times higher ampacity than any known metal, with comparable electrical conductivity as Cu. In addition, CNT-Cu structures also exhibited a superior temperature stability compared to the ∼10-times wider Cu counterparts. We believe that the combination of our approach and the properties demonstrated here are vital achievements for the future development of efficient and powerful electrical devices.
为满足电子设备当前路径中高温下对高工作电流密度日益增长的需求，需要新型的可光刻加工的高载流量材料。为满足这一需求，我们报道了一种将高载流量（比铜高约100倍）的碳纳米管 - 铜（CNT - Cu）复合材料制成各种复杂的纳米级、平面和多层电流路径的方法。该方法涉及将铜分两步电沉积到作为电极的多孔薄CNT片的预图案化模板中。这种方法的通用性使得能够实现完全悬浮的多层、无介电质的“气隙”CNT - Cu电路，这些电路可以彼此电隔离，并且用纯铜或任何金属制造具有挑战性。重要的是，所有这些宽度从500纳米到20微米不等的复杂结构，其载流量比任何已知金属高约100倍，电导率与铜相当。此外，与宽度约宽10倍的铜对应物相比，CNT - Cu结构还表现出优异的温度稳定性。我们相信，我们的方法与这里展示的特性相结合，对于高效强大的电气设备的未来发展至关重要。
