Zanettini S, Chaumy G, Chávez P, Leclerc N, Etrillard C, Leconte B, Chevrier F, Dayen J-F, Doudin B
Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg, UMR 7504 CNRS-UdS, 23 rue du Loess, 67034 Strasbourg, France.
J Phys Condens Matter. 2015 Nov 25;27(46):462001. doi: 10.1088/0953-8984/27/46/462001. Epub 2015 Nov 2.
Highly electrochemically doped poly(2,5-bis(3-dodecyl-2-yl)-thieno[3,2-b]thiophene (pBTTT) thin films exhibiting remarkably high conductivities values reaching 3000-5000 Ω(-1) cm(-1) are investigated. Experimental evidence of delocalized transport properties of this material at the onset of metallicity makes it an ideal candidate for spin valve device integration. Nevertheless, the interface resistance between the polymer and metallic electrodes is orders of magnitudes larger than the expected spin resistance of the active channel. This prevents the collection of a spin current. This finding can explain the lack of success in making lateral organic spin valves reported in the literature, especially the related absence of spin signals in non-local spin valve and Hanle current measurements in organic thin films.
研究了具有显著高电导率值（达到3000 - 5000 Ω⁻¹ cm⁻¹）的高度电化学掺杂聚（2,5 - 双（3 - 十二烷基 - 2 - 基）- 噻吩并[3,2 - b]噻吩（pBTTT）薄膜。该材料在金属性开始时离域传输特性的实验证据使其成为自旋阀器件集成的理想候选材料。然而，聚合物与金属电极之间的界面电阻比有源通道预期的自旋电阻大几个数量级。这阻止了自旋电流的收集。这一发现可以解释文献中报道的制备横向有机自旋阀未成功的原因，特别是在非局部自旋阀和有机薄膜中的汉勒电流测量中相关自旋信号的缺失。
