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(10,0) BN - AlN纳米管结的稳定性和性质的理论研究

Theoretical investigation on the stability and properties of a (10,0) BN-AlN nanotube junction.

作者信息

Thesing L A, Piquini P, Kar T

机构信息

Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS, Brazil.

出版信息

Nanotechnology. 2006 Mar 28;17(6):1637-41. doi: 10.1088/0957-4484/17/6/016. Epub 2006 Feb 27.

Abstract

The energetic, electronic and structural properties of a heterojunction formed by BN and AlN (10,0) nanotubes have been studied using first principles density functional theory. The differences between the AlN and BN nanotubes lead to structural rearrangements mainly at the junction layers. Two different types of junction occur, and net charges of opposite signs appear in each of them, with a resulting electric dipole along the heterojunction axis. The calculated band offset shows a staggered band line-up, with the heterojunction forming a one-dimensional array of quantum dots.

摘要

利用第一性原理密度泛函理论研究了由BN和AlN(10,0)纳米管形成的异质结的能量、电子和结构性质。AlN和BN纳米管之间的差异主要导致结层处的结构重排。出现了两种不同类型的结,并且在每种结中都出现了相反符号的净电荷,从而沿异质结轴产生了电偶极矩。计算得到的带隙偏移显示出交错的能带排列,异质结形成了一维量子点阵列。

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