Yao H H, Lu T C, Huang G S, Chen C Y, Liang W D, Kuo H C, Wang S C
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Ta Hsueh Road, Hsinchu 30050, Taiwan, Republic of China.
Nanotechnology. 2006 Mar 28;17(6):1713-6. doi: 10.1088/0957-4484/17/6/028. Epub 2006 Feb 27.
Self-assembled InGaN quantum dots (QDs) were grown by metal-organic chemical vapour deposition with growth interruption at low V/III ratio and low growth temperature on sapphire substrates. The effects of the interruption time on the morphological and optical properties of InGaN QDs were studied. The results show that the growth interruption can modify the dimension and distribution of InGaN QDs, and cause the QD emission wavelength to blue shift with increasing interruption time. A density of InGaN QDs of about 4.5 × 10(10) cm(-2) with an average lateral size of 11.5 nm and an average height of 1.6 nm can be obtained by using a growth interruption time of 60 s.
通过金属有机化学气相沉积法，在蓝宝石衬底上以低V/III比和低生长温度进行生长中断，制备了自组装InGaN量子点。研究了中断时间对InGaN量子点的形貌和光学性质的影响。结果表明，生长中断可以改变InGaN量子点的尺寸和分布，并导致量子点发射波长随着中断时间的增加而蓝移。通过使用60 s的生长中断时间，可以获得密度约为4.5×10(10) cm(-2)、平均横向尺寸为11.5 nm、平均高度为1.6 nm的InGaN量子点。
