Catalano M, Taurino A, Lomascolo M, Schertel A, Orchowski A
Institute for Microelectronics and Microsystems, Italian National Research Council (CNR-IMM)-Lecce Section, via Arnesano, 73100 Lecce, Italy.
Nanotechnology. 2006 Mar 28;17(6):1758-62. doi: 10.1088/0957-4484/17/6/036. Epub 2006 Mar 3.
This work investigates the critical issues in the focused ion beam (FIB) nanopatterning of semiconducting devices. Matrixes of holes with diameter of about 150 nm were drilled by FIB on the topmost layers of a quantum dot based device. In order to study the presence of artefacts in the active region of the device, the milling parameters were investigated. A careful analysis of the ion beam effects on the structural and morphological features of the holes, mainly due to the heterogeneous composition of the layers to be milled, demonstrated that important deviations from the expected structures, in terms of size, shape and geometry of the holes, as well as layer amorphization and damage, occur.
这项工作研究了半导体器件聚焦离子束（FIB）纳米图案化中的关键问题。利用聚焦离子束在基于量子点的器件的最顶层钻出了直径约为150纳米的孔矩阵。为了研究器件有源区中伪像的存在，对铣削参数进行了研究。对离子束对孔的结构和形态特征的影响进行的仔细分析表明，由于待铣削层的成分不均匀，在孔的尺寸、形状和几何形状方面以及层的非晶化和损伤方面，出现了与预期结构的重大偏差，主要是由于待铣削层的成分不均匀。
