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氧化镁/钴铁硼/钽/氧化镁多层膜中 Ru 催化剂诱导的垂直磁各向异性。

Ru Catalyst-Induced Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta/MgO Multilayered Films.

机构信息

Department of Materials Physics and Chemistry, University of Science and Technology Beijing , Beijing 100083, China.

Analytical and Testing Center, Beijing Normal University , Beijing 100875, China.

出版信息

ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26643-8. doi: 10.1021/acsami.5b08385. Epub 2015 Nov 23.

Abstract

The high oxygen storage/release capability of the catalyst Ru is used to manipulate the interfacial electronic structure in spintronic materials to obtain perpendicular magnetic anisotropy (PMA). Insertion of an ultrathin Ru layer between the CoFeB and Ta layers in MgO/CoFeB/Ta/MgO films effectively induces PMA without annealing. Ru plays a catalytic role in Fe-O-Ta bonding and isolation at the metal-oxide interface to achieve moderate interface oxidation. In contrast, PMA cannot be obtained in the sample with a Mg insertion layer or without an insertion layer because of the lack of a catalyst. Our work would provide a new approach toward catalyst-induced PMA for future CoFeB-based spintronic device applications.

摘要

催化剂 Ru 具有较高的储放氧能力,可用于调节自旋电子材料的界面电子结构,从而获得垂直磁各向异性(PMA)。在 MgO/CoFeB/Ta/MgO 薄膜中,在 CoFeB 和 Ta 层之间插入超薄 Ru 层,无需退火即可有效诱导 PMA。Ru 在 Fe-O-Ta 键合和金属-氧化物界面隔离中发挥催化作用,以实现适度的界面氧化。相比之下,在具有 Mg 插入层或没有插入层的样品中,由于缺乏催化剂,无法获得 PMA。我们的工作为未来基于 CoFeB 的自旋电子器件应用中的催化剂诱导 PMA 提供了一种新方法。

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