Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials(SICAM), Nanjing Tech University (NanjingTech) , 211816 Nanjing, China.
ACS Appl Mater Interfaces. 2015 Dec 9;7(48):26482-90. doi: 10.1021/acsami.5b07470. Epub 2015 Nov 23.
Hematite (α-Fe2O3) is one of the most promising candidates for photoelectrodes in photoelectrochemical water splitting system. However, the low visible light absorption coefficient and short hole diffusion length of pure α-Fe2O3 limits the performance of α-Fe2O3 photoelectrodes in water splitting. Herein, to overcome these drawbacks, single-crystalline tin-doped indium oxide (ITO) nanowire core and α-Fe2O3 nanocrystal shell (ITO@α-Fe2O3) electrodes were fabricated by covering the chemical vapor deposited ITO nanowire array with compact thin α-Fe2O3 nanocrystal film using chemical bath deposition (CBD) method. The J-V curves and IPCE of ITO@α-Fe2O3 core-shell nanowire array electrode showed nearly twice as high performance as those of the α-Fe2O3 on planar Pt-coated silicon wafers (Pt/Si) and on planar ITO substrates, which was considered to be attributed to more efficient hole collection and more loading of α-Fe2O3 nanocrystals in the core-shell structure than planar structure. Electrochemical impedance spectra (EIS) characterization demonstrated a low interface resistance between α-Fe2O3 and ITO nanowire arrays, which benefits from the well contact between the core and shell. The stability test indicated that the prepared ITO@α-Fe2O3 core-shell nanowire array electrode was stable under AM1.5 illumination during the test period of 40,000 s.
赤铁矿（α-Fe2O3）是光电化学水分解系统中最有前途的光电极候选材料之一。然而，纯α-Fe2O3 的低可见光吸收系数和短空穴扩散长度限制了α-Fe2O3 光电极在水分解中的性能。在此，为了克服这些缺点，通过使用化学浴沉积（CBD）方法，在化学气相沉积的 ITO 纳米线阵列上覆盖致密的薄α-Fe2O3 纳米晶薄膜，制备了单晶锡掺杂氧化铟（ITO）纳米线核和α-Fe2O3 纳米晶壳（ITO@α-Fe2O3）电极。ITO@α-Fe2O3 核壳纳米线阵列电极的 J-V 曲线和 IPCE 性能几乎是平面 Pt 涂覆硅片（Pt/Si）和平面 ITO 衬底上α-Fe2O3 的两倍，这被认为是由于核壳结构中光生空穴的收集效率更高，α-Fe2O3 纳米晶的负载量更多。电化学阻抗谱（EIS）表征表明，α-Fe2O3 与 ITO 纳米线阵列之间的界面电阻较低，这得益于核与壳之间的良好接触。稳定性测试表明，在 40000 s 的测试期间，制备的 ITO@α-Fe2O3 核壳纳米线阵列电极在 AM1.5 光照下稳定。
