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自组装的铋铁氧化物(BiFeO₃)和锆钛酸铅(Pb(Zr,Ti)O₃)铁电纳米电容器中的独特纳米域结构。

Unique nano-domain structures in self-assembled BiFeO₃ and Pb(Zr,Ti)O₃ ferroelectric nanocapacitors.

作者信息

Zhang Fengyuan, Miao Qing, Tian Guo, Lu Zengxing, Zhao Lina, Fan Hua, Song Xiao, Li Zhongwen, Zeng M, Gao Xingsen, Liu Junming

机构信息

Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, People's Republic of China.

出版信息

Nanotechnology. 2016 Jan 8;27(1):015703. doi: 10.1088/0957-4484/27/1/015703. Epub 2015 Nov 23.

Abstract

In this work, self-assembled ferroelectric BiFeO3 (BFO) and Pb(Zr,Ti)O3 (PZT) nanocapacitors were fabricated by a one-step pulsed-laser deposition process. Each individual nanocapacitor consists of a SrRuO3 or LaSrMnO3 bottom electrode layer, an epitaxial ferroelectric middle layer and a self-assembled nanoisland of conductive Bi2O3 or PbO2 as the top nanoelectrode. The nanoelectrodes have a lateral size of 10-100 nm depending on various deposition equivalent thickness. The as-fabricated nanocapacitors exhibit unique so-called anti-domain structures, with opposite polarization orientation to that of the naked ferroelectric films, which can be understood by the different interface built-in-voltages between their neighboring layers. They also show apparent reduced coercive fields and enhanced piezoelectricity compared to the naked films, as revealed by the switching spectroscopy piezoresponse force microscopy (SSPFM) and band-excitation mapping. Besides that, individual addressable polarization writing and erasing properties were also observed in these nanocapacitors and the written domain can maintain stability up to 12 h, which is promising for data storage devices.

摘要

在本工作中,通过一步脉冲激光沉积工艺制备了自组装铁电体BiFeO3(BFO)和Pb(Zr,Ti)O3(PZT)纳米电容器。每个单独的纳米电容器由一个SrRuO3或LaSrMnO3底部电极层、一个外延铁电中间层以及一个作为顶部纳米电极的导电Bi2O3或PbO2自组装纳米岛组成。根据不同的沉积等效厚度,纳米电极的横向尺寸为10 - 100 nm。所制备的纳米电容器呈现出独特的所谓反畴结构,其极化取向与裸铁电薄膜相反,这可以通过相邻层之间不同的界面内建电压来理解。如开关光谱压电响应力显微镜(SSPFM)和能带激发映射所揭示的,与裸薄膜相比,它们还表现出明显降低的矫顽场和增强的压电性。除此之外,在这些纳米电容器中还观察到了单个可寻址的极化写入和擦除特性,并且写入的畴能够保持高达12小时的稳定性,这对于数据存储设备来说很有前景。

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