在铌酸锶钛（Nb-SrTiO3）衬底上的高密度铋铁氧体（BiFeO3）纳米电容器阵列中的电流整流和电阻开关特性
Current rectifying and resistive switching in high density BiFeO3 nanocapacitor arrays on Nb-SrTiO3 substrates.
作者信息
Zhao Lina, Lu Zengxing, Zhang Fengyuan, Tian Guo, Song Xiao, Li Zhongwen, Huang Kangrong, Zhang Zhang, Qin Minghui, Lu Xubing, Zeng Min, Gao Xingsen, Dai Jiyan, Liu Jun-Ming
机构信息
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China.
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
出版信息
Sci Rep. 2015 Apr 8;5:9680. doi: 10.1038/srep09680.
Ultrahigh density well-registered oxide nanocapacitors are very essential for large scale integrated microelectronic devices. We report the fabrication of well-ordered multiferroic BiFeO3 nanocapacitor arrays by a combination of pulsed laser deposition (PLD) method and anodic aluminum oxide (AAO) template method. The capacitor cells consist of BiFeO3/SrRuO3 (BFO/SRO) heterostructural nanodots on conductive Nb-doped SrTiO3 (Nb-STO) substrates with a lateral size of ~60 nm. These capacitors also show reversible polarization domain structures, and well-established piezoresponse hysteresis loops. Moreover, apparent current-rectification and resistive switching behaviors were identified in these nanocapacitor cells using conductive-AFM technique, which are attributed to the polarization modulated p-n junctions. These make it possible to utilize these nanocapacitors in high-density (>100 Gbit/inch(2)) nonvolatile memories and other oxide nanoelectronic devices.
超高密度且对准良好的氧化物纳米电容器对于大规模集成微电子器件至关重要。我们报道了通过脉冲激光沉积（PLD）方法和阳极氧化铝（AAO）模板法相结合制备出排列有序的多铁性BiFeO3纳米电容器阵列。电容器单元由位于导电的掺铌SrTiO3（Nb-STO）衬底上的BiFeO3/SrRuO3（BFO/SRO）异质结构纳米点组成，其横向尺寸约为60纳米。这些电容器还展现出可逆的极化畴结构以及良好的压电响应迟滞回线。此外，利用导电原子力显微镜技术在这些纳米电容器单元中识别出了明显的电流整流和电阻开关行为，这归因于极化调制的p-n结。这些使得在高密度（>100 Gbit/英寸²）非易失性存储器及其他氧化物纳米电子器件中利用这些纳米电容器成为可能。
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