Matsushita Stephane Yu, Hu Chunping, Kawamoto Erina, Kato Hiroki, Watanabe Kazuyuki, Suto Shozo
Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
Department of Physics, Tokyo University of Science, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan.
J Chem Phys. 2015 Dec 7;143(21):214702. doi: 10.1063/1.4936656.
We studied the lattice constants, surface-phonon dispersion curves, spectral densities, and displacement vectors of the hydrogen-terminated Si(110)-(1 × 1) [H:Si(110)-(1 × 1)] surface using the first-principles calculations within the framework of density functional theory (DFT). The symmetry of the H:Si(110)-(1 × 1) surface belongs to the two-dimensional space group p2mg, which has two highly symmetric and orthogonal directions, ΓX¯ and ΓX(')¯, with the glide planes along the ΓX¯ direction. Because glide symmetry separates the even and odd surface phonon modes, we mapped the even surface modes in the first surface Brillouin zone (SBZ) and the odd surface modes in the second SBZ using the spectral densities and displacement vectors. The surface phonon modes were analyzed with respect to their physical origin, spatial localization properties, polarization, and the charge density of their electronic states. Our calculated surface phonon modes were in good agreement with recent high-resolution electron-energy-loss spectroscopy data in the first and second SBZs of the ΓX¯ direction. In the SBZ of the ΓX(')¯ direction, our calculated surface phonon modes agree well with the data in the energy region below 65 meV but are not satisfactorily compatible with those in the stretching and bending modes. In addition, we discuss the microscopic nature of the surface phonon dispersion of the H:Si(110)-(1 × 1) surface using the phonon eigen modes.
我们在密度泛函理论(DFT)框架内使用第一性原理计算,研究了氢终止的Si(110)-(1×1) [H:Si(110)-(1×1)]表面的晶格常数、表面声子色散曲线、谱密度和位移矢量。H:Si(110)-(1×1)表面的对称性属于二维空间群p2mg,它有两个高度对称且正交的方向,ΓX¯和ΓX(')¯,沿ΓX¯方向有滑移面。由于滑移对称性将偶数和奇数表面声子模式分开,我们利用谱密度和位移矢量在第一表面布里渊区(SBZ)映射了偶数表面模式,在第二SBZ映射了奇数表面模式。从表面声子模式的物理起源、空间局域化性质、极化及其电子态的电荷密度方面对其进行了分析。我们计算得到的表面声子模式与最近在ΓX¯方向的第一和第二SBZ中的高分辨率电子能量损失谱数据吻合良好。在ΓX(')¯方向的SBZ中,我们计算得到的表面声子模式在能量低于65 meV的区域与数据吻合良好,但在伸缩和弯曲模式下与数据的吻合度并不令人满意。此外,我们利用声子本征模式讨论了H:Si(110)-(1×1)表面声子色散的微观本质。