Department of Chemical and Biological Engineering, Korea University, Anam-dong, Sungbuk-gu, Seoul 136-713, Korea.
Department of Chemical Engineering, University of Seoul, Seoul 130-743, Korea.
Phys Chem Chem Phys. 2016 May 25;18(21):14198-204. doi: 10.1039/c5cp04422g.
We report defect-engineered graphene chemical sensors with ultrahigh sensitivity (e.g., 33% improvement in NO2 sensing and 614% improvement in NH3 sensing). A conventional reactive ion etching system was used to introduce the defects in a controlled manner. The sensitivity of graphene-based chemical sensors increased with increasing defect density until the vacancy-dominant region was reached. In addition, the mechanism of gas sensing was systematically investigated via experiments and density functional theory calculations, which indicated that the vacancy defect is a major contributing factor to the enhanced sensitivity. This study revealed that defect engineering in graphene has significant potential for fabricating ultra-sensitive graphene chemical sensors.
我们报告了具有超高灵敏度的缺陷工程石墨烯化学传感器（例如，NO2 传感提高 33%，NH3 传感提高 614%）。采用传统的反应离子刻蚀系统以受控方式引入缺陷。基于石墨烯的化学传感器的灵敏度随缺陷密度的增加而增加，直到达到空位主导区域。此外，通过实验和密度泛函理论计算系统地研究了气体传感机制，表明空位缺陷是增强灵敏度的主要因素。这项研究表明，石墨烯中的缺陷工程在制造超灵敏石墨烯化学传感器方面具有巨大的潜力。
