Chen Xiaowen, Wang Lisha, Han Wenjuan, Guo Yunfeng, Xu Honghao, Yu Haohai, Zhang Huaijin, Liu Junhai
Opt Express. 2015 Nov 16;23(23):30357-63. doi: 10.1364/OE.23.030357.
High-energy passively Q-switched operation of a Yb:GdCa(4)O(BO(3))(3) laser is demonstrated, with a GaAs crystal plate acting as saturable absorber. An average output power of 1.31 W at 1027 nm is produced at a pulse repetition rate of 1.92 kHz, the resulting pulse energy, duration, and peak power being respectively 0.68 mJ, 9.0 ns, and 75.6 kW. The shortest pulse duration obtained is 4.9 ns; whereas the maximum pulse energy achievable amounts to 0.83 mJ, which proves to be nearly one order of magnitude higher than ever generated from Yb or Nd lasers passively Q-switched by a GaAs saturable absorber.
展示了一种以GaAs晶体板作为可饱和吸收体的Yb:GdCa₄O(BO₃)₃激光器的高能被动调Q运转。在1.92 kHz的脉冲重复频率下，在1027 nm处产生了1.31 W的平均输出功率，所产生的脉冲能量、持续时间和峰值功率分别为0.68 mJ、9.0 ns和75.6 kW。获得的最短脉冲持续时间为4.9 ns；而可实现的最大脉冲能量达到0.83 mJ，这比由GaAs可饱和吸收体被动调Q的Yb或Nd激光器所产生的能量高出近一个数量级。
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