异质结构ReS/GaAs可饱和吸收体被动调Q Nd:YVO激光器
Heterostructure ReS/GaAs Saturable Absorber Passively Q-Switched Nd:YVO Laser.
作者信息
Liu Lijie, Chu Hongwei, Zhang Xiaodong, Pan Han, Zhao Shengzhi, Li Dechun
机构信息
School of Information Science and Engineering, Shandong University, Qingdao, 266000, China.
出版信息
Nanoscale Res Lett. 2019 Mar 29;14(1):112. doi: 10.1186/s11671-019-2953-7.
Heterostructure ReS/GaAs was fabricated on a 110-μm (111) GaAs wafer by chemical vapor deposition method. Passively Q-switched Nd:YVO laser was demonstrated by employing heterostructure ReS/GaAs as a saturable absorber (SA). The shortest pulse width of 51.3 ns with a repetition rate of 452 kHz was obtained, corresponding to the pulse energy of 465 nJ and the peak power of 9.1 W. In comparison with the ReS Q-switched laser and the GaAs Q-switched laser, the heterostructer ReS/GaAs Q-switched laser can generate shorter pulse duration and higher pulse energy.
通过化学气相沉积法在一块110μm（111）的砷化镓晶圆上制备了异质结构ReS/GaAs。通过将异质结构ReS/GaAs用作可饱和吸收体（SA），演示了被动调Q的Nd:YVO激光器。获得了最短脉冲宽度为51.3 ns、重复频率为452 kHz的脉冲，对应的脉冲能量为465 nJ，峰值功率为9.1 W。与ReS调Q激光器和GaAs调Q激光器相比，异质结构ReS/GaAs调Q激光器能够产生更短的脉冲持续时间和更高的脉冲能量。
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