Effect of Nano Al Interlayer on the Schottky Contact Property Between Metal and Hg3In2Te6 Wafer.

In this paper, the fabrication and characterization of Schottky diodes based on Hg3In2Te6 (short for MIT) wafer are presented. The Al interlayer with 1 nm thickness was grown on the MIT wafer by Vacuum thermal evaporation method. Diodes characterization of metal/Al/MIT contact were performed by I-V measurement. Then the Schottky barrier height and ideality factor were calculated from I-V test results by means of the thermionic emission model. The results showed that the Schottky barrier heights of Ni/Hg3In2Te6, Au/Hg3In2Te6 were reduced from 0.86, 0.85 eV to 0.74, 0.81 eV respectively, and ideality factors decreased from 1.88 and 1.89 to 1.67 and 1.58 accordingly when the Al thin film about 1 nm in thickness was used for the interlayer of the MIT Schottky diode. It was found that the Al interlayer can significantly alleviates the Fermi-level pinning, and the interface defect mechanisms for the depinning were discussed based on interface states model and the metal-induced gap states model.