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转移硅纳米膜界面的热阻

Thermal Resistance of Transferred-Silicon-Nanomembrane Interfaces.

作者信息

Schroeder D P, Aksamija Z, Rath A, Voyles P M, Lagally M G, Eriksson M A

机构信息

University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.

University of Massachusetts-Amherst, Amherst, Massachusetts 01003, USA.

出版信息

Phys Rev Lett. 2015 Dec 18;115(25):256101. doi: 10.1103/PhysRevLett.115.256101. Epub 2015 Dec 15.

Abstract

We report measurements of the interfacial thermal resistance between mechanically joined single crystals of silicon, the results of which are up to a factor of 5 times lower than any previously reported thermal resistances of mechanically created interfaces. Detailed characterization of the interfaces is presented, as well as a theoretical model incorporating the critical properties determining the interfacial thermal resistance in the experiments. The results demonstrate that van der Waals interfaces can have very low thermal resistance, with important implications for membrane-based micro- and nanoelectronics.

摘要

我们报告了对机械连接的单晶硅之间界面热阻的测量结果,其结果比之前报道的任何机械制造界面的热阻低至五分之一。文中给出了界面的详细表征,以及一个纳入了实验中决定界面热阻的关键特性的理论模型。结果表明,范德华界面可以具有非常低的热阻,这对基于膜的微电子和纳米电子学具有重要意义。

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