电感耦合等离子体对通过离子束物理气相沉积形成的掺钛氧化铟锡薄膜的结构和电学性能的影响。

Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD.

作者信息

Hong Chan-Hwa, Shin Jae-Heon, Park Nae-Man, Kim Kyung-Hyun, Kim Bo-Sul, Song Chang-Woo, Yang Ji-Woong, Seo Woo-Hyung, Ju Byeong-Kwon, Cheong Woo-Seok

出版信息

J Nanosci Nanotechnol. 2015 Oct;15(10):8099-102. doi: 10.1166/jnn.2015.11289.

DOI:10.1166/jnn.2015.11289

PMID:26726469

Abstract

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

摘要

在本研究中，我们研究了通过使用电感耦合等离子体（ICP）的电离物理气相沉积（IPVD）形成的掺钛氧化铟锡（ITO）薄膜。掺钛ITO薄膜的迁移率随ICP功率的增加而提高；由于结晶度的改善，即使在室温下，掺钛ITO（30纳米）的薄层电阻也从295.1大幅降至134.5欧姆/平方。因此，IPVD技术为具有大面积窗口统一触摸屏面板的透明电极提供了一种有用的工具。