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配体间耦合在决定胶体 CdS 量子点界面电子结构中的作用。

Role of Interligand Coupling in Determining the Interfacial Electronic Structure of Colloidal CdS Quantum Dots.

机构信息

Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208-3113, United States.

出版信息

ACS Nano. 2016 Jan 26;10(1):1395-403. doi: 10.1021/acsnano.5b06837. Epub 2016 Jan 6.

Abstract

Displacement of cadmium oleate (Cd(oleate)2) ligands for the exciton-delocalizing ligand 4-hexylphenyldithiocarbamate (C6-PTC) on the surfaces of CdS quantum dots (QDs) causes a decrease in the band gap (Eg) of the QD of ∼100 meV for QDs with a radius of 1.9 nm and ∼50 meV for QDs with a radius of 2.5 nm. The primary mechanism of this decrease in band gap, deduced in previous work, is a decrease in the confinement barrier for the excitonic hole. The increase in apparent excitonic radius of the QD that corresponds to this decrease in Eg is denoted ΔR. The dependence of ΔR on the surface coverage of C6-PTC, measured by (1)H NMR spectroscopy, appears to be nonlinear. Calculations of the excitonic energy of a CdS QD upon displacement of native insulating ligands with exciton-delocalizing ligands using a 3D spherical potential well model show that this response includes the contributions to ΔR from both isolated, bound C6-PTC ligands and groups of adjacent C6-PTC ligands. Fits to the experimental plots of ΔR vs surface coverage of C6-PTC with a statistical model that includes the probability of formation of clusters of bound C6-PTC on the QD surface allow for the extraction of the height of the confinement barrier presented by a single, isolated C6-PTC molecule to the excitonic hole. This barrier height is less than 0.6 eV for QDs with a radius of 1.9 nm and between 0.6 and 1.2 eV for QDs with a radius of 2.5 nm.

摘要

油酸镉(Cd(oleate)2)配体被具有激子离域作用的 4-己基苯硫代氨基甲酸盐(C6-PTC)取代后,CdS 量子点(QD)的能带隙(Eg)会减小约 100 meV(半径为 1.9nm 的 QD)和约 50 meV(半径为 2.5nm 的 QD)。在之前的研究中,推断出这种带隙减小的主要机制是激子空穴的限制势垒降低。与 Eg 减小相对应的 QD 表观激子半径的增加用ΔR 表示。通过(1)H NMR 光谱测量的 C6-PTC 的表面覆盖率对ΔR 的依赖性似乎是非线性的。使用三维球形势阱模型计算用激子离域配体取代本征绝缘配体后 CdS QD 的激子能量,表明这种响应包括来自孤立、结合的 C6-PTC 配体和相邻 C6-PTC 配体群对ΔR 的贡献。用包含结合在 QD 表面的 C6-PTC 簇形成概率的统计模型对实验数据的拟合,可以提取出单个孤立的 C6-PTC 分子对激子空穴的限制势垒的高度。对于半径为 1.9nm 的 QD,该势垒高度小于 0.6eV,而对于半径为 2.5nm 的 QD,该势垒高度在 0.6eV 至 1.2eV 之间。

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