一种基于具有2.0 cm² V⁻¹ s⁻¹高迁移率水平的聚集诱导发光活性单晶的双极有机场效应晶体管。
An ambipolar organic field-effect transistor based on an AIE-active single crystal with a high mobility level of 2.0 cm(2) V(-1) s(-1).
作者信息
Deng Jian, Xu Yuanxiang, Liu Liqun, Feng Cunfang, Tang Jia, Gao Yu, Wang Yan, Yang Bing, Lu Ping, Yang Wensheng, Ma Yuguang
机构信息
State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China.
State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, P. R. China and State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
出版信息
Chem Commun (Camb). 2016 Feb 7;52(11):2370-3. doi: 10.1039/c5cc09702a.
Organic field-effect transistors (OFETs) based on an aggregation-induced emission (AIE) material were fabricated using a calcium-gold asymmetric electrode system. The devices showed very high and balanced mobility, reaching 2.50 and 2.10 cm(2) V(-1) s(-1), respectively, for electron and hole. Strong green electroluminescence from the single-crystal side edge was observed from all the devices. This work demonstrates that AIE active materials could not only achieve high luminescence, but also be used in light emitting transistors and achieve very high mobility.
基于聚集诱导发光（AIE）材料的有机场效应晶体管（OFET）采用钙-金不对称电极系统制备而成。这些器件展现出非常高且平衡的迁移率，电子和空穴的迁移率分别达到2.50和2.10 cm² V⁻¹ s⁻¹。从所有器件的单晶侧边沿观察到强烈的绿色电致发光。这项工作表明，AIE活性材料不仅能够实现高发光，还可用于发光晶体管并实现非常高的迁移率。
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