Deng Jian, Tang Jia, Xu Yuanxiang, Liu Liqun, Wang Yan, Xie Zengqi, Ma Yuguang
State Key Laboratory of Supramolecular Structure and Materials, P. R. China.
Phys Chem Chem Phys. 2015 Feb 7;17(5):3421-5. doi: 10.1039/c4cp04265d. Epub 2014 Dec 22.
High and balanced hole and electron mobilities were achieved in OFETs based on the high photoluminescence of a 1,4-bis(2-cyano-2-phenylethenyl)benzene single-crystal with symmetric electrodes. For electron and hole, the operation voltage in the OFETs based on symmetric gold electrodes was 30 and -20 V, respectively. The accumulation threshold voltage is low enough for the OFETs to operate in an ambipolar model with the source/drain voltage (Vds) around 50 V despite the high injection barrier. The highest electron and hole mobility was 0.745 cm(2) V(-1) s(-1) and 0.239 cm(2) V(-1) s(-1), and the current density reached 90.7 and 27.4 A cm(-2), respectively with an assumed 10 nm accumulation layer. The high mobility comes from the strong π-π interactions. In addition, the highly ordered hydrogen bonding matrix may create an efficient route to pump the charge to the inner layer which can improve the injection ability.
基于具有对称电极的1,4-双（2-氰基-2-苯乙烯基）苯单晶的高光致发光特性，在有机场效应晶体管（OFETs）中实现了高且平衡的空穴和电子迁移率。对于电子和空穴，基于对称金电极的OFETs中的工作电压分别为30 V和 -20 V。尽管注入势垒较高，但积累阈值电压足够低，使得OFETs能够在源漏电压（Vds）约为50 V的双极性模式下工作。在假设积累层为10 nm的情况下，最高电子迁移率和空穴迁移率分别为0.745 cm² V⁻¹ s⁻¹和0.239 cm² V⁻¹ s⁻¹，电流密度分别达到90.7 A cm⁻²和27.4 A cm⁻²。高迁移率源于强烈的π-π相互作用。此外，高度有序的氢键矩阵可能创造出一条将电荷泵入内层的有效途径，从而提高注入能力。
