Zhu Ying, Bai Hongcun, Huang Yuanhe
College of Chemistry, Beijing Normal University, Beijing 100875, People's Republic of China.
J Phys Condens Matter. 2016 Feb 3;28(4):045303. doi: 10.1088/0953-8984/28/4/045303. Epub 2016 Jan 8.
This work presents crystal orbital studies on novel one-dimensional (1D) nanoscale materials derived from a Si-diyne sheet, based on the density functional theory. The two-dimensional (2D) Si-diyne layer is observed to be carbo-merized silicene, with a similar structure to graphdiyne. The 2D Si-diyne and its 1D ribbons and tubes, of different size and chirality, have been addressed systematically. The low dimensional Si-diyne materials studied exhibit relatively high stability, according to phonon-frequency calculations and molecular dynamics simulations. With comparable diameters, the Si-diyne tubes have lower strain energies than silicene and silicon carbide nanotubes. The Si-diyne layer and its 1D derivatives are all semiconductors, regardless of the size and chirality of the strips and tubes. In addition, the band gaps of the 1D Si-diyne nanoribbons and nanotubes with different chirality, always monotonically decrease as their sizes increases. A quantitative relationship between the band gap and the size of the ribbons and tubes was obtained. The mobility of charge carriers for the 1D Si-diyne structures was also investigated. It was found that both hole and electron mobility of the ribbons and tubes exhibit linear increase with increasing size. The electrons have greater mobility than the holes for each strip and tube. In addition, the mechanical properties of the Si-diyne nanostructures were also investigated by calculation of the Young's modulus and the Poisson's ratio.
这项工作基于密度泛函理论,对源自硅二炔片的新型一维(1D)纳米级材料进行了晶体轨道研究。二维(2D)硅二炔层被观察到是碳硅化硅烯,其结构与石墨二炔相似。系统地研究了二维硅二炔及其不同尺寸和手性的一维带和管。根据声子频率计算和分子动力学模拟,所研究的低维硅二炔材料表现出相对较高的稳定性。在直径相当的情况下,硅二炔管的应变能比硅烯和碳化硅纳米管低。硅二炔层及其一维衍生物都是半导体,与条带和管的尺寸和手性无关。此外,具有不同手性的一维硅二炔纳米带和纳米管的带隙总是随着尺寸的增加而单调减小。得到了带隙与带和管尺寸之间的定量关系。还研究了一维硅二炔结构中电荷载流子的迁移率。发现带和管的空穴和电子迁移率都随着尺寸的增加呈线性增加。对于每个条带和管,电子的迁移率都比空穴大。此外,还通过计算杨氏模量和泊松比研究了硅二炔纳米结构的力学性能。