Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 77 Cheongam-Ro, Pohang 790-784, Korea and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Phys Rev Lett. 2015 Dec 31;115(26):266803. doi: 10.1103/PhysRevLett.115.266803. Epub 2015 Dec 28.
We demonstrate using scanning tunneling microscopy and spectroscopy the electron quantization within metallic Au atomic wires self-assembled on a Si(111) surface and segmented by adatom impurities. The local electronic states of wire segments with a length up to 10 nm are investigated as terminated by two neighboring Si adatoms. One-dimensional (1D) quantum well states are well resolved by their spatial distributions and the inverse-length-square dependence in their energies. The quantization also results in the quantum oscillation of the conductance at Fermi level. The present approach provides a new and convenient platform to investigate 1D quantum phenomena with atomic precision.
我们使用扫描隧道显微镜和光谱学证明了在 Si(111)表面自组装并由吸附原子杂质分段的金属 Au 原子线内的电子量子化。研究了长度达 10nm 的线材段的局部电子态，这些线材段由两个相邻的 Si 吸附原子终止。一维（1D）量子阱态通过其空间分布和能量的反比长度平方依赖性得到很好的分辨。量子化还导致费米能级处电导的量子振荡。本方法为以原子精度研究一维量子现象提供了一个新的、方便的平台。
