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通过超快自蔓延高温合成制备的 Mg2Si(1-x)Sb(x) (0 ≤ x ≤ 0.025) 的相分离和优异的热电性能。

Phase Segregation and Superior Thermoelectric Properties of Mg2Si(1-x)Sb(x) (0 ≤ x ≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis.

机构信息

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology , Wuhan 430070, China.

Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology , Taiyuan 030024, China.

出版信息

ACS Appl Mater Interfaces. 2016 Feb 10;8(5):3268-76. doi: 10.1021/acsami.5b11063. Epub 2016 Jan 27.

Abstract

A series of Sb-doped Mg2Si(1-x)Sb(x) compounds with the Sb content x within 0 ≤ x ≤ 0.025 were prepared by self-propagating high-temperature synthesis (SHS) combined with plasma activated sintering (PAS) method in less than 20 min. Thermodynamic parameters of the SHS process, such as adiabatic temperature, ignition temperature, combustion temperature, and propagation speed of the combustion wave, were determined for the first time. Nanoprecipitates were observed for the samples doped with Sb. Thermoelectric properties were characterized in the temperature range of 300-875 K. With the increasing content of Sb, the electrical conductivity σ rises markedly while the Seebeck coefficient α decreases, which is attributed to the increase in carrier concentration. The carrier mobility μ(H) decreases slightly with the increasing carrier concentration but remains larger than the Sb-doped samples prepared by other methods, which is ascribed to the self-purification process associated with the SHS synthesis. In spite of the increasing electrical conductivity with the increasing Sb content x, the overall thermal conductivity κ decreases on account of a significantly falled lattice thermal conductivity κ(L) due to the strong point defect scattering on Sb impurities and possibly enhanced interface scattering on nanoprecipitates. As a result, the sample with x = 0.02 achieves the thermoelectric figure of merit ZT ∼ 0.65 at 873 K, one of the highest values for the Sb-doped binary Mg2Si compounds investigated so far. A subsequent annealing treatment on the sample with x = 0.02 at 773 K for 7 days has resulted in no noticeble changes in the thermoelectric transport properties, indicating an excellent thermal stability of the compounds prepared by the SHS method. Therefore, SHS method can serve as an effective alternative fabrication route to synthesize Mg-Si based themoelectrics and some other functional materials due to the resulting high performance, perfect thermal stability, and feasible production in large scale for commercial application.

摘要

采用自蔓延高温合成(SHS)结合等离子体激活烧结(PAS)技术,在不到 20 分钟的时间内制备了一系列 Sb 掺杂 Mg2Si(1-x)Sb(x)化合物,其中 Sb 含量 x 范围为 0≤x≤0.025。首次测定了 SHS 过程的热力学参数,如绝热温度、点火温度、燃烧温度和燃烧波传播速度。对于掺杂 Sb 的样品,观察到纳米沉淀物。在 300-875 K 的温度范围内对其热电性能进行了表征。随着 Sb 含量的增加,电导率 σ 显著升高,而 Seebeck 系数 α 降低,这归因于载流子浓度的增加。载流子迁移率 μ(H)随着载流子浓度的增加略有降低,但仍大于通过其他方法制备的 Sb 掺杂样品,这归因于与 SHS 合成相关的自净化过程。尽管随着 Sb 含量 x 的增加电导率增加,但由于 Sb 杂质的强点缺陷散射和可能增强的纳米沉淀物界面散射,晶格热导率 κ(L)显著降低,导致整体热导率 κ 降低。结果,x=0.02 的样品在 873 K 时达到了热电优值 ZT∼0.65,这是迄今为止研究的 Sb 掺杂二元 Mg2Si 化合物中最高值之一。对 x=0.02 的样品在 773 K 下进行 7 天的退火处理后,热电输运性能没有明显变化,表明通过 SHS 方法制备的化合物具有优异的热稳定性。因此,由于其出色的性能、完美的热稳定性和可行的大规模生产,用于商业应用,SHS 方法可以作为合成 Mg-Si 基热电材料和其他一些功能材料的有效替代制造途径。

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